HALF-TIME PREPARATION AND PROCEDURES FOR THE PREPARATION OF A HALF-TIME PREPARATION

摘要

A process for the production of a semiconductor device involves the application of a plasma to a section of a metal dicalcogen film. The film contains a first metal and a Chalkogen, selected from the group of S, Se, Te and combinations thereof. After application of the plasma, a metal layer with a second metal is formed over the section of the metal diachalcogene film.