Vertical resonant surface emitting laser, vertical resonant surface emitting laser

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a vertical resonance type surface emission laser having a current constriction structure formed by using injection of Al ions.;SOLUTION: A method for manufacturing a surface emission semiconductor laser is provided, which includes steps of: forming a first mask that covers a first area of the main surface of a substrate in an epitaxial substrate having a semiconductor laminate for a surface emission semiconductor laser and that has an opening above a second area of the main surface of the substrate; injecting Al ions by using the above mask; etching the semiconductor laminate to form, on the substrate, a semiconductor post comprising an active layer and a first semiconductor layer of a III-V compound semiconductor containing aluminum as a group III element as well as a group V element; and after the ion injection, oxidizing a part of the first semiconductor layer of the semiconductor post in an oxidative atmosphere so as to form a post structure from the semiconductor post, the post structure including a current aperture of the III-V compound semiconductor and an oxide barrier wall.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2019,JPO&INPIT