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Method of manufacturing partially freestanding two-dimensional crystal film and device comprising such a film

机译:制造部分独立式二维晶体膜的方法和包括这种膜的装置

摘要

Disclosed is a method of manufacturing a partially freestanding two-dimensional crystal film (16, 16′), the method comprising providing a substrate (10) carrying a catalyst layer (14) for forming the two-dimensional crystal layer on a first surface; forming the two-dimensional crystal film on the catalyst layer; covering at least the two-dimensional crystal film with a protective layer (18); etching a cavity (24) in a second surface of the substrate, the second surface being opposite to the first surface, said cavity terminating on the catalyst layer; etching the exposed part of the catalyst layer from the cavity; and removing the protective layer, thereby obtaining a two-dimensional crystal film that is freestanding over said cavity. A device manufactured in this manner is also disclosed.
机译:公开了一种制造部分独立的二维晶体膜( 16,16,16))的方法,该方法包括提供携带催化剂层的基板( 10 )(< b> 14 / b>用于在第一表面形成二维晶体层;在催化剂层上形成二维晶体膜;用保护层覆盖至少二维晶体膜( 18/b>);在基板的第二表面中蚀刻腔( 24℃),第二表面与第一表面相对,所述腔终止于催化剂层上;从腔体蚀刻催化剂层的暴露部分;并去除保护层,从而获得在所述空腔上自由地独立的二维晶体膜。还公开了一种以这种方式制造的装置。

著录项

  • 公开/公告号US11033862B2

    专利类型

  • 公开/公告日2021-06-15

    原文格式PDF

  • 申请/专利权人 KONINKLIJKE PHILIPS N.V.;

    申请/专利号US201414787778

  • 发明设计人 KAMAL ASADI;JOHAN HENDRIK KLOOTWIJK;

    申请日2014-04-21

  • 分类号H01L21/033;H01L21/027;B81C1;B01D71/02;B01D69/12;B01D67;

  • 国家 US

  • 入库时间 2022-08-24 19:20:14

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