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High etch resistance spin-on carbon hard mask composition and patterning method using same
High etch resistance spin-on carbon hard mask composition and patterning method using same
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机译:高蚀刻电阻旋转碳硬掩模组合物和使用该碳硬掩模组成和图案化方法
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摘要
Provided is a hard mask composition having high etching resistance suitable for use in a semiconductor lithography process, and particularly to a spin-on hard mask composition including a dibenzo carbazole polymer and to a patterning method of forming a hard mask layer by applying the composition on an etching layer through spin coating and performing a baking process. The hard mask according to the present invention has effects of exhibiting high solubility and superior mechanical properties, as well as high etching resistance to withstand multiple etching processes.
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