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Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the same
Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the same
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机译:具有上间距漏极选择栅电极的三维存储器件和制造方法
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摘要
An array of memory stack structures extends through an alternating stack of insulating layers and electrically conductive layers. The drain-select-level assemblies may be provided by forming drain-select-level openings through a drain-select-level sacrificial material layer, and by forming a combination of a cylindrical electrode portion and a first gate dielectric mayin each first drain-select-level opening while forming a second gate dielectric directly on a sidewall of each second drain-select-level opening in a second subset of the drain-select-level openings. A strip electrode portion is formed by replacing the drain-select-level sacrificial material layer with a conductive material. Structures filling the second subset of the drain-select-level openings may be used as dummy structures at a periphery of an array. The dummy structures are free of gate electrodes and thus prevents a leakage current therethrough.
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