Heterostructure field-effect transistor based on semiconductor gallium nitride compound

摘要

The utility model relates to the technology of microelectronics, namely to the technology of obtaining discrete devices and monolithic integrated circuits based on a semiconductor compound of gallium nitride, in particular, to the creation of ohmic and barrier contacts for heterostructure field-effect transistors with high electron mobility. In the transistor, the ohmic contact is made on the basis of a three-layer Ta / Al / Pd metallization. The Ta layer with a thickness of 5-100 nm is located on the surface of the semiconductor wafer, on its surface there is an Al layer with a thickness of 50-1000 nm, on the surface of which there is a Pd layer with a thickness of 5-100 nm. The T-shaped gate is made on the basis of a three-layer composition in which a barrier-forming layer of Ni with a thickness of 10-200 nm is located in series on the surface of a semiconductor wafer, a conductive layer based on Al with a thickness of 10-1000 nm, a protective layer based on Pd with a thickness of 10-200 nm ... The technical result is an increase in the thermal stability of electrical parameters. 1 ill.