首页> 外国专利> PROCESS FOR HYDROPHOBIZING SHAPED INSULATION-MATERIAL BODIES BASED ON SILICA AT AMBIENT PRESSURE

PROCESS FOR HYDROPHOBIZING SHAPED INSULATION-MATERIAL BODIES BASED ON SILICA AT AMBIENT PRESSURE

机译:基于二氧化硅在环境压力下疏水化的疏水化方法

摘要

The present invention relates to a process for producing a hydrophobized shaped thermal- insulation body, comprising pressing or compacting a thermal-insulation mixture containing a silica, an IR opacifier, an organosilicon compound A and an organosilicon compound B, wherein organosilicon compound A is hexamethyldisilazane (HMDS) and organosilicon compound B corresponds to a substance of the formula RnSiX4-n, where R = hydrocarbyl radical having 1 to 18 carbon atoms, n = 0, 1 or 2, X = Cl, Br or alkoxy group –OR1 where R1 = hydrocarbyl radical having 1 to 8 carbon atoms, or organosilicon compound B corresponds to a silanol of the formula HO[-Si(CH3)2O-]mH, where m = 2-100.
机译:本发明涉及制备疏水化形绝热体的方法,包括按压或压制含有二氧化硅,IR遮光剂,有机硅化合物A和有机硅化合物B的绝热混合物,其中有机硅化合物A是六甲基二硅氮烷(HMDS)和有机硅化合物B对应于式RNSIX4-N的物质,其中R =具有1至18个碳原子的烃基,n = 0,1或2,X = Cl,Br或烷氧基 - r1,其中R1 =具有1至8个碳原子的烃基,或有机硅化合物B对应于式HO [-SI(CH3)2O-] MH的硅烷醇,其中M = 2-100。

著录项

  • 公开/公告号EP3823942A1

    专利类型

  • 公开/公告日2021-05-26

    原文格式PDF

  • 申请/专利权人 EVONIK OPERATIONS GMBH;

    申请/专利号EP20190735345

  • 申请日2019-07-08

  • 分类号C04B30;C04B30/02;C04B40;C04B111/27;C04B111/28;C04B111/52;

  • 国家 EP

  • 入库时间 2024-06-14 21:36:24

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号