Bit-line switch circuit for NAND-flash memory

摘要

The present invention relates to a bit line switch circuit of a NAND flash memory, and includes a selection unit for selecting a bit line during a read mode and a discharge including low voltage transistors, and a pair of bit lines positioned between the selection unit and a cell array. It selects one, and includes a blocking unit that blocks the output terminal from being affected by the high voltage applied to the bit line in the erase mode.