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TWO-STAGE SIGNALING FOR VOLTAGE DRIVER COORDINATION IN INTEGRATED CIRCUIT MEMORY DEVICES

机译:集成电路存储器件中的电压驱动器协调的两级信令

摘要

An integrated circuit memory device comprising: memory cells; A circuit patch constructed on the integrated circuit die; A plurality of adjacent patches configured on the integrated circuit die; First connections from the circuit patch to adjacent patches, respectively; A plurality of peripheral patches configured on the integrated circuit die; And second connections from adjacent patches to peripheral patches. When determining whether to apply an offset voltage to be driven by adjacent patches and peripheral patches on unselected memory cells, to at least partially offset an increase in voltage applied by the circuit patch on one or more selected memory cells, a circuit patch Is in communication with adjacent patches through first connections, and with peripheral patches through first connections, adjacent patches and second connections.
机译:集成电路存储器设备包括:存储器单元;在集成电路管芯上构造的电路贴片;在集成电路管芯上配置的多个相邻贴片;第一个从电路补丁与相邻斑块的连接;在集成电路管芯上配置的多个外围贴片;和来自相邻贴片的第二个连接到外围贴片。当在未选择的存储器单元上的相邻贴片和外围贴片上确定是否施加偏移电压时,至少部分地偏移电路贴片在一个或多个所选择的存储单元上施加的电压增加,电路补丁正在通信通过第一连接,通过第一连接,相邻的斑块和第二连接的外围贴片。

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