首页> 外国专利> TWO-STAGE SIGNALING FOR VOLTAGE DRIVER COORDINATION IN INTEGRATED CIRCUIT MEMORY DEVICES

TWO-STAGE SIGNALING FOR VOLTAGE DRIVER COORDINATION IN INTEGRATED CIRCUIT MEMORY DEVICES

机译:集成电路存储器件中的电压驱动器协调的两级信令

摘要

An integrated circuit memory device, having: memory cells; a circuit patch configured on an integrated circuit die; a plurality of neighboring patches configured on the integrated circuit die; first connections from the circuit patch to the neighboring patches respectively; a plurality of surrounding patches configured on the integrated circuit die; and second connections from the neighboring patches to the surrounding patches. In determining whether or not to apply an offset voltage to be driven by the neighboring patches and the surrounding patches on non-selected memory cells, to at least partially offset a voltage increase applied by the circuit patch on one or more selected memory cells, the circuit patch communicates with the neighboring patches through the first connections, and communicates with the surrounding patches through the first connections, the neighboring patches, and the second connections.
机译:集成电路存储器件,具有:存储器单元;配置在集成电路管芯上的电路贴片;配置在集成电路管芯上的多个相邻贴片;从电路补丁分别从电路修补程序连接到相邻补丁的第一连接;配置在集成电路管芯上的多个周围贴片;和来自邻近补丁到周围补丁的第二个连接。在确定是否施加由非所选存储器单元上的相邻贴片和周围贴片施加偏移电压,至少部分地偏移由电路贴片在一个或多个所选存储器单元上施加的电压增加,电路补丁通过第一个连接与相邻补丁通信,并通过第一连接,相邻补丁和第二连接与周围斑块通信。

著录项

  • 公开/公告号US2021118492A1

    专利类型

  • 公开/公告日2021-04-22

    原文格式PDF

  • 申请/专利权人 MICRON TECHNOLOGY INC.;

    申请/专利号US202017037497

  • 发明设计人 NATHAN JOSEPH SIROCKA;MINGDONG CUI;

    申请日2020-09-29

  • 分类号G11C11/413;G11C11/4074;G11C29/50;G11C11/4094;G11C11/408;

  • 国家 US

  • 入库时间 2022-08-24 18:19:44

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