EDGE-DEFINED FILM-FED GROWTH-BASED SAPPHIRE CRYSTAL GROWTH FURNACE CAPABLE OF MULTIPLE REPLACEMENT OF SEED CRYSTALS

摘要

Provided is an edge-defined film-fed growth-based sapphire crystal growth furnace capable of multiple replacement of seed crystals, provided with a base, a crystal growth furnace cavity, a crucible, seed crystal rods, a sealing valve, a standby seed crystal chamber cavity, a seed crystal replacement tray, and lifters sequentially from the bottom to the top. By improving a series of structures of a crucible feeding system, the seed crystal replacement tray, the seed crystal rods, and a standby seed crystal chamber, after the growth of crystals in the crucible is completed, without cooling of a device, the crystals are taken out by using a mechanical transmission manner and are replaced with seed crystals, seeding is performed again, and the crystal growth process is repeated. Compared to prior seed crystal replacement solutions, the present invention is not limited by the number of seed crystals in the standby seed crystal chamber, allowing multiple open of the standby seed crystal chamber to take out crystals and replace them with standby seed crystals. As long as melt in the crucible is sufficient, the growth can continue 10-20 times, greatly increasing the growth efficiency of a sapphire crystal.