FEOL INTERCONNECT USED AS CAPACITANCE OVER FINS INSTEAD OF GATES

摘要

Aspects of the invention include forming a semiconductor device. Gates are formed in a first direction over fins, the gates including gate material, the fins being formed in a second direction. Fin interconnects are formed in the first direction over the fins. A dielectric material is formed on the fins, and capacitor interconnects are formed over portions of the dielectric material in the first direction over the fins.