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METHOD FOR FORMING A CHEMICAL GUIDING STRUCTURE ON A SUBSTRATE AND CHEMO-EPITAXY METHOD

机译:在基板和化学外延法上形成化学引导结构的方法

摘要

One aspect of the present invention relates to a method of forming a chemical guiding structure intended for self-assembly of organic nano-objects by chemo-epitaxy, the method comprising the following steps: -On the substrate 100, forming a sacrificial pattern 300 having a critical dimension (CD S ) in a plane flat with the substrate 100; -On the substrate 100, between the sacrificial patterns 300, forming at least one first pattern 210a made of a first polymer material, wherein the first polymer material is an organic nano-object Has a first chemical affinity (AF1); -Reducing the critical dimension (CD S ) of the sacrificial pattern by partially etching (S13) the sacrificial pattern 300, wherein the sacrificial pattern 300 is the at least one first Selectively etched for pattern 210a; -Forming a second pattern made of a second polymer material on the substrate 100, in the region 100b created by partial etching of the sacrificial pattern 300, wherein the second polymer material is a first Has a second chemical affinity for the organic nano-object, different from the chemical affinity (AF1); And -Including the step of removing the sacrificial pattern (300).
机译:本发明的一个方面涉及一种形成用于通过化学外延的用于自组装有机纳米物体的化学引导结构的方法,该方法包括以下步骤: - 衬底100,形成牺牲图案300平面中的临界尺寸(CD S )与基板100平面; - 在牺牲图案300之间形成基板100,形成由第一聚合物材料制成的至少一个第一图案210a,其中第一聚合物材料是有机纳米物体具有第一化学亲和力(AF1); 通过部分蚀刻(S13)牺牲图案300,其中牺牲图案300是针对图案210a的第至少一个选择性地蚀刻的缩小尺寸(S13)的临界尺寸(S13)的临界尺寸(CDS )。 - 在基板100上由第二聚合物材料制成的第二图案,在通过牺牲图案300的部分蚀刻产生的区域100b中,其中第二聚合物材料是对有机纳米物体的第二化学亲和力,不同于化学亲和力(AF1); - 或 - 包括去除牺牲图案(300)的步骤。

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