A method for evaluating the carbon concentration of a silicon sample, a method for evaluating a silicon wafer manufacturing process, a method for manufacturing a silicon wafer, and a method for manufacturing a silicon single crystal ingot

摘要

Introducing a hydrogen atom into a silicon sample to be evaluated, subjecting the silicon sample to be evaluated to which the hydrogen atom is introduced into an evaluation method for evaluating the trap level in the band gap of silicon, and among the evaluation results obtained by the above evaluation. , Ec-0.10 eV, Ec-0.13 eV and Ec-0.15 eV, including evaluating the carbon concentration of the evaluation target silicon sample based on the evaluation result of the density of at least one trap level selected from the group consisting of, , The introduction of the hydrogen atom is carried out by contacting the silicon sample to be evaluated with a solution, and the solution has a molar ratio (HNO ₃ /(HNO ₃ +HF)) of 0.72 or more and 0.82 or less, or 0.87 or more and 0.91 or less. A method for evaluating the carbon concentration of a silicon sample is provided.