A method for evaluating the carbon concentration of a silicon sample, a method for evaluating a silicon wafer manufacturing process, a method for manufacturing a silicon wafer, and a method for manufacturing a silicon single crystal ingot

摘要

Introducing a hydrogen atom into a silicon sample to be evaluated, subjecting the silicon sample to be evaluated to which the hydrogen atom is introduced into an evaluation method for evaluating the trap level in the band gap of silicon, and among the evaluation results obtained by the above evaluation. , Ec (energy at the bottom of the conduction band) -0.10 eV, Ec -0.13 eV and Ec -0.15 eV, based on the evaluation result of the density of at least one trap level selected from the group consisting of, the carbon of the silicon sample to be evaluated It includes evaluating the concentration, and performing a heat treatment of heating the silicon sample to be evaluated at a heating temperature in the range of 35°C to 80°C using a heating means between the introduction of the hydrogen atom and the evaluation. A method for evaluating the carbon concentration of a silicon sample containing as is provided.