Fabrication of gallium nitride-based light emitting diodes (LEDs) having aluminum nitride buffer layers formed by physical vapor deposition (PVD) is described. For example, a multi-chamber system includes a physical vapor deposition (PVD) chamber with a target made of aluminum. Also included are chambers adapted to deposit undoped or n-type gallium nitride, or both. In another example, a method of manufacturing a light emitting diode (LED) structure includes forming an aluminum nitride layer on a substrate in a physical vapor deposition (PVD) chamber of a multi-chamber system. An undoped or n-type gallium nitride layer is formed on the aluminum nitride layer in the second chamber of the multi-chamber system.
展开▼
