LIGHT-EMITTING DIODE COMPRISING A SEMICONDUCTOR BASED ON ALN P-DOPED WITH ATOMS OF MAGNESIUM AND A LAYER OF DOPED DIAMOND

摘要

Light-emitting diode (100) comprising: a first, n-doped semiconductor portion (104); a second, p-doped semiconductor portion (108); an active region (106) arranged between the first and second portions and comprising at least one semiconductor emissive portion; a layer (120) that is electrically conductive and optically transparent to at least one wavelength in the UV range that is intended to be emitted from the emissive portion, said layer being such that the second portion is arranged between said layer and the active region; in which: the semiconductors of the first portion and the emissive portion correspond to compounds comprising atoms of nitrogen and atoms of aluminum and/or gallium; the semiconductor of the second portion corresponds to Al_X2Ga_(1-X2-Y2)InY_2N p-doped with atoms of magnesium, with X2 > 0, Y2 > 0 et X2+Y2 ≤ 1, and in which the atomic concentration of magnesium is higher than 10¹⁷ at/cm³; the electrically conductive layer (120) comprises doped diamond.