PROCEDURES FOR ESTABLISHING A HALF-LIMITED PRODUCTION

摘要

A process for the production of a semiconductor device (100) is provided. The procedure may include the provision of a subsidised semiconductor wafer substrate (1) of a first type of conductivity with an epitaxial layer (2) of the first type of conductivity, a picture of an area (6) of a second type of conductivity by dosing a top layer of the epitaxial layer (2),a picture of two trenches (13),extending through the area (6) of the second type of conductivity at least to the area of the epitaxial layer (2) with the first type of conductivity, a complete filling of the two trenches with oxide (4),a removal of the area (6) and partial removal of the epitaxial layer (2) between the two oxygen-filled ditches (13, 4),and a picture of an area of the second conductivity type (15) between the two trenches (13, 4) by dotting the part of the epitaxial layer remaining between the two trenches (13, 4).