HALF-LIMITED INSTRUCTION STRUCTURE AND PROCEDURES FOR ESTABLISHING A HALF-LIMITED INSTRUCTURE

摘要

A semiconductor device with a safety structure includes an area of semiconductor material with a main surface. A dielectric area is located above the main surface. A first fuse is over a first part of the dielectric range, a second fuse is over a second part of the dielectric range and is supported by the first fuse to provide a gap area,and a fuse over a third of the dielectric range is arranged and connected between the first fuse and the second fuse. A first blind structure is located above the dielectric area in the gap area on the first side of the fuse, where the blind structure is electrically isolated from the fuse, the first fuse and the second fuse. The blind structure is configured to reduce the presence or effects of defects, such as cracks or cavities, which may originate from the protective structure.