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PROCEDURES FOR THE MANUFACTURE OF HALF-LIMITED PARTICULARS WITH HALF-LIMITED PARTICULARS INCLUDED IN A HALF-LIMITED CHILD'S CHILD APPROPRIATE
PROCEDURES FOR THE MANUFACTURE OF HALF-LIMITED PARTICULARS WITH HALF-LIMITED PARTICULARS INCLUDED IN A HALF-LIMITED CHILD'S CHILD APPROPRIATE
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机译:适当地制造半限定儿童的程序,其中包括半限定儿童的半限定儿童
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摘要
A method of manufacturing a semiconductor device which starts with a semiconductor wafer which is provided with a layer of semiconductor material lying on an insulating layer at a first side. Semiconductor elements and conductor tracks are formed on this first side of the semiconductor wafer. Then the semiconductor wafer is fastened with this first side to a support wafer, and material is removed from the semiconductor wafer from its other, second side until the insulating layer has been exposed. The method starts with a semiconductor wafer whose insulating layer is an insulating as well as a passivating layer. The semiconductor device must be provided with a usual passivating layer after its manufacture in order to protect it against moisture and other influences. In the method described here, such a passivating layer is present already before the manufacture of the semiconductor device starts.
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