PROCEDURES FOR THE MANUFACTURE OF A HALF-LIMITED AUTHORITY

摘要

Procedure for the production of a semiconductor component, the semiconductor component having:an active zone (2, 22) formed in a top layer of a semiconductor layer (1) of a first type of conductivity; andseveral electric field relaxation layers (3, 32, 30, 31) arranged from one edge of the active zone to the outside so as to surround the active zone (2, 22), with:the multiple electric field relaxation layers (3, 32, 30, 31) comprise several first electric field relaxation layers and several second electric field relaxation layers arranged alternately adjacent to each other, the first electric field relaxation layer and the secondelectric field relaxation layer adjacent to each other, forming a group,Substances of a second conductivity type are implanted in the first electric field relaxation layers with a first surface density, with widths of the first electric field relaxation layers becoming smaller with increasing distance from the active zone (2,22),Substances of the second type of conductivity are implanted in the second electric field relaxation layers with a second surface density less than the first surface density, with widths of the second electric field relaxation layers becoming larger with increasing distance from the active zone (2, 22); andthe multiple electric field relaxation layers are arranged in a sequence of the first electric field relaxation layer and the second electric field relaxation layer from the side of the active zone (2, 22);where the active zone (2,22) is a first major electrode layer of the second conductivity type,where the semiconductor component also includes a second main electrode layer (20) of the first conductivity type, which is formed in a main surface of the semiconductor layer (1) on a side opposite the side on which the active zone (2,22) is intended,where the first main electrode layer, the semiconductor layer and the second main electrode layer form a PN transition diode,with the first electric field relaxation layer adjacent to the first main electrode layer,and a concentration of the foreign matter of the first electric field relaxation layer is lower than a concentration of the foreign matter of the first main electrode layer,in addition, having several additional electric field relaxation layers (32), which are designed to surround several electric field relaxation layers, with:multiple additional electric field relaxation layers (32) multiple implantation-free zones in which no second conductivity type foreign substances are implanted, and comprise several third electric field relaxation layers with the same conductivity type and surface thickness as the second electric field relaxation layers, with the multiple implantation-free zones and the several third electric field relaxation layers alternately adjacent to each other, where each of the implant-free zones and each of the third electric field relaxation layers adjacent to each other form a group,the third electric field relaxation layers have widths that become smaller with increasing distance from the active zone (2, 22),the implantation-free zones have widths that are increasing with increasing distance from the active zone (2, 22); andthe multiple additional electric field relaxation layers (32) are arranged in a sequence of the implantation-free zone and the third electric field relaxation layer from the side of the active zone (2, 22), the procedure comprising the following steps:(a) the formation of a first implantation mask on the semiconductor layer, and ion implantation of foreign materials of the second conductivity type with the second surface density, in order to form a foreign layer identical to the second electric field relaxation layer (12) in such a way that it extends in zones; in which the first electric field relaxation layers are trained and the third electric field relaxation layers are trained to determine the free zones of foreign matter; and(b)after the step (a),on the semiconductor layer, the formation of a second implantation mask, comprising at least sections above zones intended to serve as second electric field relaxation layers, sections above the third electric field relaxation layers, and sections, coated over the implantation-free zones, and ion implantation of second conductivity foreign substances with a surface density which, by adding to the second surface density, becomes the first surface density, thereby forming the first electric field relaxation layers.