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LAYOUT PATTERN OF TWO-PORT TERNARY CONTENT ADDRESSABLE MEMORY

机译:双端口三元内容可寻址记忆的布局模式

摘要

A layout pattern of a two-port ternary content addressable memory (TCAM) includes a first storage unit, a second storage unit, a first comparison circuit and a second comparison circuit. The first comparison circuit and the second comparison circuit are positioned in a first side area of a side and a second side area of another side of the layout pattern, respectively. The first storage unit and the second storage unit are positioned in a first middle area and a second middle area between the first side area and the second side area, respectively. The first storage unit is connected to the first comparison circuit through a first gate structure and connected to the second comparison circuit through a second gate structure. The second storage unit is connected to the first comparison circuit through a third gate structure and connected to the second comparison circuit through a fourth gate structure.
机译:双端口三元内容可寻址存储器(TCAM)的布局图案包括第一存储单元,第二存储单元,第一比较电路和第二比较电路。第一比较电路和第二比较电路分别位于布局图案的另一侧的侧面和第二侧区域的第一侧区域中。第一存储单元和第二存储单元分别位于第一中间区域和第一侧区域和第二侧区域之间的第二中间区域。第一存储单元通过第一栅极结构连接到第一比较电路,并通过第二栅极结构连接到第二比较电路。第二存储单元通过第三栅极结构连接到第一比较电路,并通过第四栅极结构连接到第二比较电路。

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