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EXCHANGE COUPLED FILM, AND MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETISM DETECTION DEVICE USING SAME

机译:交换耦合膜,磁阻效应元件和磁性检测装置使用相同

摘要

An exchange-coupled film 10 according to the present invention includes an antiferromagnetic layer 2, pinned magnetic layer 3, and free magnetic layer 5 which are stacked. The antiferromagnetic layer 2 is composed of a PtCr sublayer 2A and an XMn sublayer 2B (where X is Pt or Ir). The XMn sublayer 2B is in contact with the pinned magnetic layer 3. The PtCr sublayer 2A is PtCr(α is 44 at% to 58 at%) when the XMn sublayer 2B is placed on the PtCr sublayer 2A or is PtCr(α is 44 at% to 57 at%) when the XMn sublayer 2B is placed on the pinned magnetic layer 3. Therefore, the exchange-coupled film 10 exhibits such a high magnetic field (Hex) that the magnetization direction of the pinned magnetic layer 3 is reversed and also exhibits high stability under high-temperature conditions.
机译:根据本发明的交换耦合膜10包括堆叠的反铁磁层2,钉磁层3和自由磁层5。反铁磁层2由PTCR子层2A和XMN子层2B(其中X是PT或IR)组成。当XMN子层2B放置在PTCR子层2A上时,XMN子层2B与钉磁层2B接触PTCR子层2A,PTCR子层2a是PTCR(α为58at%),或者是PTCR(α是44当XMN子层2B放置在钉扎磁层3上时%至57处。因此,交换耦合膜10呈现这种高磁场(六角形),使得钉磁层3的磁化方向颠倒并且在高温条件下也表现出高稳定性。

著录项

  • 公开/公告号EP3499596B1

    专利类型

  • 公开/公告日2021-04-21

    原文格式PDF

  • 申请/专利权人

    申请/专利号EP20170839297

  • 申请日2017-08-02

  • 分类号G01R33;G01R33/09;H01F10/12;H01F10/32;H01L43/08;H01L43/10;H01L43/12;

  • 国家 EP

  • 入库时间 2024-06-14 21:27:02

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