TVS DEVICE USING VERTICAL TRIODE TO TRIGGER SURFACE SILICON CONTROLLED RECTIFIER STRUCTURE

摘要

Disclosed in the present invention is a TVS device using a vertical triode to trigger a surface silicon controlled rectifier structure, comprising a semiconductor body, the semiconductor body comprising a surface junction silicon controlled rectifier structure and a vertical NPN structure, the pass-through isolation of an anode of the silicon controlled rectifier structure and the semiconductor body being connected by metal; when the vertical NPN structure breaks down, the surface junction silicon controlled rectifier structure is triggered; by means of the addition of the trigger structure, the present invention provides a voltage or current in order to reduce the trigger voltage and increase the maintenance voltage, such that the TVS performance of the silicon controlled rectifier structure is closer to ideal.