首页> 外国专利> BISMUTH VANADATE ELECTRODE COMPRISING VANADIUM-FUNCTIONALIZED GRAPHENE QUANTUM DOTS AND A PREPARATION METHOD THEREOF

BISMUTH VANADATE ELECTRODE COMPRISING VANADIUM-FUNCTIONALIZED GRAPHENE QUANTUM DOTS AND A PREPARATION METHOD THEREOF

机译:氟铋钒酸盐电极包括钒官能化石墨烯量子点及其制备方法

摘要

The present disclosure relates to a bismuth vanadate electrode including vanadium-functionalized graphene quantum dots and a method for preparing the same. More particularly, it relates to a technology which is capable of, by adding graphene quantum dots (GQDs) in the process of immersing a bismuth vanadate (BiVO4) electrode in an alkaline solution to remove vanadium oxide (V2O5) excessively formed on the surface of the electrode during its preparation, protecting the electrode from the alkaline solution as the graphene quantum dots are adsorbed onto the surface of BiVO4 while V2O5 is removed, and improving the efficiency of oxygen evolution reaction (OER) when applied to a photoanode due to vanadium (V)-functionalized graphene quantum dots formed as the etched vanadium ions ((VO)43−) are adsorbed onto the graphene quantum dots.
机译:本公开涉及一种易钒酸盐电极,包括钒官能化的石墨烯量子点和制备方法的方法。更具体地,它涉及一种能够通过在将石墨烯量子点(GQDS)中加入浸入碱性溶液中的钒酸盐(BiVo 4-Sim>)电极中的方法中的工艺来涉及一种技术,以除去氧化钒(在其制备过程中过度形成在电极表面上的V <亚> 2 O 5 ),将来自碱性溶液的电极保护在Bivo的表面上,保护电极从碱性溶液中吸附 4 ,而V 2 O 5 被移除,并且当涂覆到钒时施加到光电码时的氧进化反应(oer)的效率( v) - 官能化的石墨烯量子点作为蚀刻的钒离子((Vo) 4 3 - sup>)被吸附在石墨烯量子点上。

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