Compound semiconductor equipment, manufacturing methods for compound semiconductor equipment, power supply equipment, and amplifiers

摘要

PROBLEM TO BE SOLVED: To provide a compound semiconductor device using a nitride semiconductor material capable of preventing occurrence of current collapse phenomenon.SOLUTION: The compound semiconductor device includes: a substrate 21; an electron travel layer 23 formed over the substrate 21; a compound semiconductor layer 26 containing Ga formed above the electron travel layer 23; a diffusion prevention layer 41 containing gallium oxide formed over the compound semiconductor layer 26; an insulator layer 42 formed over the diffusion prevention layer 41; and a source electrode 40a, a drain electrode 40b, and a gate electrode 49a, which are formed above the electron travel layer 23 being separated from each other.SELECTED DRAWING: Figure 10