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System based on low-pressure chemical vapor deposition for fabricating perovskite film from organic halide compound and metal halide compound

机译:基于低压化学气相沉积的系统从有机卤化物和金属卤化物中制造钙钛矿膜

摘要

A system and method for fabricating a perovskite film is provided, the system including a housing for use as a CVD furnace having first and second sections coupled with first and second temperature control units, respectively. The first and second sections correspond substantially to the upstream and downstream of gases, respectively. One or more substrates are loaded in the second section and controlled by the second temperature control unit, and an evaporation unit containing an organic halide material is loaded in the first section and controlled by the first temperature control unit. Each of the substrates is pre-deposited with a metal halide material. The inside of the housing is pumped down to a low pressure.
机译:提供了一种用于制造钙钛矿膜的系统和方法,该系统包括用于分别用作具有第一和第二段与第一和第二温度控制单元联接的CVD炉的CVD炉的壳体。第一和第二部分分别对应于气体上游和下游。一个或多个基板在第二部分中加载并由第二温度控制单元控制,并且包含有机卤化物材料的蒸发单元在第一部分中加载并由第一温度控制单元控制。每个基板用金属卤化物材料预沉积。壳体的内部被泵送到低压。

著录项

  • 公开/公告号US10975498B2

    专利类型

  • 公开/公告日2021-04-13

    原文格式PDF

  • 申请/专利号US201515503780

  • 发明设计人 YABING QI;MATTHEW RYAN LEYDEN;

    申请日2015-08-17

  • 分类号C30B31/16;C23C16/448;H01L33;H01L33/26;C23C16/30;C30B25/02;C30B29/12;C30B25;C30B31/12;C23C16/52;C30B29/54;H01L51;H01L51/42;H01G9/20;H01L51/50;

  • 国家 US

  • 入库时间 2022-08-24 18:11:16

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