A SINGLE TRANSISTOR CAPABLE OF USING BOTH NEURON AND SYNAPTIC DEVICES, AND A NEUROMORPHIC SYSTEM USING IT

摘要

The present invention enables both neuronal operation and synaptic operation through a single transistor including a floating body layer and a charge storage layer, and by using this, a neuron device and a synaptic device are simultaneously implemented (co-integration) on the same plane. A single transistor implementing a lomorphic system and a neuromorphic system using the same, comprising: a hole barrier material layer formed on a substrate and including a hole barrier material or an electron barrier material, and floating formed on the hole barrier material layer A floating body, a source and a drain formed on both sides of the floating body layer, a gate insulating layer formed on the floating body layer and including an oxide layer and a charge storage layer, and a gate formed on the gate insulating layer To form a single transistor.