Low-Power Terahertz Magnetic Nano-oscillators

摘要

A magnetic nano-oscillation device according to an embodiment of the present invention includes a ferromagnetic layer disposed on a substrate; A non-magnetic conductive layer stacked on the ferromagnetic layer; An antiferromagnetic layer (or ferrimagnetic layer) stacked on the nonmagnetic conductive layer; And first and second electrodes respectively contacting both side surfaces of the ferromagnetic layer and the non-magnetic conductive layer. The antiferromagnetic layer (or ferrimagnetic layer) is a thin film made of a material that is magnetized in a vertical or horizontal direction with respect to a film surface, and the ferromagnetic layer is magnetized in a horizontal direction from the film surface of the ferromagnetic layer, and the first and second The in-plane current injected into the ferromagnetic layer and the non-magnetic conductive layer through electrodes provides a spin current including spin in the thickness direction of the thin film transmitted to the antiferromagnetic layer (or ferrimagnetic layer), and the antiferromagnetic layer (or Ferri magnetic layer) generates a precession of magnetization of sub-lattice.