Low-Power Terahertz Magnetic Nano-oscillators

摘要

According to one embodiment of the present invention, a magnetic nano-oscillation device comprises: a ferromagnetic layer arranged on a substrate; a nonmagnetic conductive layer laminated on the ferromagnetic layer; an antiferromagnetic layer (or ferrimagnetic layer) laminated on the nonmagnetic conductive layer; and first and second electrodes in contact with both side surfaces of the ferromagnetic layer and the nonmagnetic conductive layer, respectively. The antiferromagnetic layer (or ferrimagnetic layer) is a thin film made of a material which is magnetized in a direction perpendicular or horizontal with respect to a film surface, the ferromagnetic layer is magnetized in a horizontal direction on the film surface of the ferromagnetic layer, and the in-plane current injected into the ferromagnetic layer and the nonmagnetic conductive layer through the first and second electrodes provides a spin current including a spin in a thickness direction of the thin film transferred to the antiferromagnetic layer (or ferrimagnetic layer) to generate a magnetization precession of a sublattice of the antiferromagnetic layer (or ferrimagnetic layer). Therefore, an objective of the present invention is to reduce the current required for self-oscillation.