首页> 外国专利> SPURIOUS MODES SUPPRESSION IN A BULK ACOUSTIC WAVE DEVICE

SPURIOUS MODES SUPPRESSION IN A BULK ACOUSTIC WAVE DEVICE

机译:散装声波装置中的虚假模式抑制

摘要

The present invention relates to a Bulk Acoustic Wave (BAW) device. In particular, the invention is concerned with suppressing spurious modes in a BAW device. The BAW device comprises a piezoelectric layer (101), and a top electrode (102) and a bottom electrode (103) sandwiching the piezoelectric layer. The piezoelectric layer is configured to propagate a BAW. The top electrode and bottom electrode are configured to couple an electrical signal to a BAW propagating in the piezoelectric layer. The piezoelectric layer includes a core region (104) located between the top electrode and the bottom electrode and a frame region (105) located below and/or at a side edge of the top electrode. The frame region comprises one or more material elements (106) embedded in the piezoelectric layer, wherein the one or more embedded material elements have acoustic and/or material properties different from those of the surrounding material of the piezoelectric layer. The material elements may form a phononic crystal. Spurious modes can thus be effectively suppressed.
机译:本发明涉及一种散装声波(BAW)装置。特别地,本发明涉及抑制BAW器件中的杂散模式。 BAW器件包括压电层(101)和夹在压电层的顶部电极(102)和底部电极(103)。压电层配置成传播BAW。顶电极和底部电极被配置为将电信号耦合到在压电层中传播的BAW。压电层包括位于顶部电极和底部电极之间的芯区域(104)和位于顶部电极的侧边缘和/或处于顶部电极的侧边缘之间的框架区域(105)。框架区域包括嵌入压电层中的一个或多个材料元件(106),其中所述一个或多个嵌入材料元件具有与所述压电层的周围材料的物质不同的声学和/或材料特性。材料元件可以形成声子晶体。因此可以有效地抑制杂散模式。

著录项

  • 公开/公告号WO2021063492A1

    专利类型

  • 公开/公告日2021-04-08

    原文格式PDF

  • 申请/专利权人 HUAWEI TECHNOLOGIES CO. LTD.;ERBES ANDREJA;

    申请/专利号WO2019EP76645

  • 发明设计人 ERBES ANDREJA;

    申请日2019-10-01

  • 分类号H03H9/02;H03H9/17;

  • 国家 EP

  • 入库时间 2022-08-24 18:09:53

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