Near infrared photodetector converting optical radiation into electrical signal, operating at room temperature and utilizing photodiode composed of inorganic semiconductor silicon layer and organic layer, as well as metallic aluminum electrodes, which form electrical contacts between the heterojunction and the external electrical circuit and having a layered structure, where the inorganic and organic layers constitute a hybrid heterojunction, which contains an organic semiconductor material belonging to the functionalized indigoid group, with the LUMO energy level below -4 eV. The heterojunction is made of a layer of 6,6- dinitroindigo deposited onto a silicon substrate. It also beneficial to use indigoids with the substituent groups in the aromatic rings belonging to the nitro or cyanide groups.
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