Measuring semiconductor doping using constant surface potential corona charging

摘要

An example method of characterizing a semiconductor sample includes measuring an initial value, V_in, of a surface potential at a region of a surface of the semiconductor sample, biasing the semiconductor sample to have a target surface potential value (V₀) of 2V or less, and depositing a monitored amount of corona charge (ΔQ₁) on the region of the surface after adjusting the surface potential to the target value. The method also includes measuring a first value, V₁, of the surface potential at the region after depositing the corona charge, determining the first change of surface potential (ΔV₁=V₁−V₀), and determining the first capacitance value C₁=ΔQ₁/ΔV₁, and characterizing the semiconductor sample based on V₀, V₁, ΔV₁, ΔQ₁ and C₁.