FinFET device with T-shaped fin

摘要

A semiconductor device structure is provided. The semiconductor device structure includes an isolation feature over a substrate and a fin structure protruding from the substrate and partially surrounded by the isolation feature. The fin structure includes a first portion above the isolation feature and having a first width. The fin structure also includes a second portion extending from a top of the first portion and having a second width greater than the first width, so that the fin structure above the isolation feature has a T-shaped profile. The semiconductor device structure also includes a gate structure covering the first portion and the second portion of the fin structure.