首页> 外国专利> Method to improve adhesion of photoresist on silicon substrate for extreme ultraviolet and electron beam lithography

Method to improve adhesion of photoresist on silicon substrate for extreme ultraviolet and electron beam lithography

机译:改善光致抗蚀剂对极紫外线和电子束光刻硅衬底的粘附性的方法

摘要

An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.
机译:包括通过施加氢氟(HF)的化学方法,包括从待蚀刻的半导体表面去除含有氧化物表面层的蚀刻工艺,其中氢氟(HF)的化学终止于用硅 - 氢键蚀刻的半导体表面,基于由炔烃,醇和其组合组成的基团施加蒸气灌注剂,以将硅烷终止表面转化为疏水性有机表面。该方法继续在疏水性有机表面上形成光致抗蚀剂层;并图案化光致抗蚀剂层。此后,开发光致抗蚀剂的图案化部分以提供蚀刻掩模。然后蚀刻由蚀刻掩模暴露的半导体表面的部分。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号