A photogate photodetector (10) comprising: a first electrode consisting of amorphous germanium (12) covered with transition metal species having a thickness in the range of 0.1-5 nm (11); a second electrode (14) which is an n-type silicon layer; and a dielectric layer (13) arranged between the first and second electrode; with a depletion layer (15) formed in the n-type silicon layer (14) at the interface to the dielectric layer (13).
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