SYNTHESIS OF HEXAGONAL BORON NITRIDE FILMS AND TRANSFER METHOD

摘要

Method of producing hexagonal boron nitride (h-BN) by chemical vapour deposition (CVD), comprising; a) heating the substrate at a first temperature for a first time; b) exposing the substrate to a precursor containing boron and a precursor containing nitrogen, or a single precursor containing boron and nitrogen, at a first partial pressure of the precursor(s) at a second temperature for a second time; c) heating the substrate at a third temperature for a third time without the precursor; and d) exposing the substrate to the precursors at a fourth temperature at a second partial pressure of the precursor(s) for a fourth time. The substrate may be platinum or a platinum alloy. A second aspect is directed towards a method of transfer of h-BN produced according to the first aspect, comprising; e) applying a carrier material (which may be LOR, PMMA, PPC, PVB, CAB, PVP, PC or PVA) such that the h-BN adheres to the carrier material; f) removing the carrier material having h-BN adhered to it from the first substrate; g) applying the carrier material having h-BN adhered to it, to the second substrate, and, h) removing the carrier material.