Temperature and leakage compensation for memory cells in an analog neural memory system used in deep learning neural networks

摘要

A number of embodiments are disclosed for providing temperature compensation and leakage compensation for an analog neuromorphic memory system used in a deep learning neural network. Embodiments for providing temperature compensation implement individual or continuous adaptive slope compensation and renormalization for devices in a memory system, reference memory cells, or selected memory cells. Embodiments for providing leakage compensation within a memory cell in a memory system implement adaptive erase gate coupling, or application of a negative bias on a control gate terminal, a negative bias on a word line terminal, or a bias on a source line terminal.