Fin-based anti-fuse device for integrated circuit (IC) products, methods of making such an anti-fuse device and IC products comprising such an anti-fuse device

摘要

One IC product disclosed herein includes, among other things, a semiconductor substrate, a first anti-fuse device formed on the semiconductor substrate, the first anti-fuse device comprising at least one first fin formed with a first fin pitch, a first source region and a first drain region, wherein the first anti-fuse device is adapted to breakdown when a first programing voltage is applied to the first anti-fuse device, and a second anti-fuse device formed on the semiconductor substrate, the second anti-fuse device comprising at least one second fin formed with a second fin pitch, a second source region and a second drain region, wherein the second anti-fuse device is adapted to breakdown when a second programing voltage is applied to the second anti-fuse device, wherein the first fin pitch is greater than the second fin pitch and wherein the first programming voltage is greater than the second programing voltage.