Terahertz Planar Schottky Barrier Diode with Zigzag Bridge Anode Electrode

摘要

The utility model relates to the field of semiconductor electronics, namely to the construction of diodes with a Schottky barrier, intended for use in radio engineering devices in the terahertz frequency range.;A terahertz planar diode with a Schottky barrier with an anode electrode in the form of a zigzag bridge includes a semi-insulating substrate with a semiconductor mesa with a two-level doping profile decreasing in the growth direction, a) on the surface of which, through a window in the dielectric, a metal electrode of the Schottky contact is formed, connected to the surface lying between a semi-insulating substrate and a mesa foot of a stop layer through a zigzag anode bridge; b) through a window, in the lightly doped layer of which an ohmic contact is formed to its heavily doped layer, edged with a cathode bus.;The proposed design of a terahertz planar diode with a Schottky barrier makes it possible to simultaneously select the thickness of the mesa of the diode element equal to the skin-layer depth in n + -GaAs and form the metallization of the output contacts with a thickness several times smaller than the thickness of the mesa at its foot, as well as to minimize the number of plane-parallel spaced current-carrying structural elements with different potentials.;The technical result is the possibility of a two-fold decrease in the length of the diode element without increasing the values of its parasitic parameters: shunt capacitance and series resistance; and also simplification of the technical implementation of a terahertz receiver based on a diode of the proposed design when integrated with a coplanar transmission line within the framework of a quasi-optical scheme for introducing terahertz radiation.