The invention relates to a method for producing semiconductor wafers from monocrystalline silicon, comprising the steps of: drawing a cylindrical portion of a monocrystal of silicon from a melt that is contained in a crucible; subjecting the melt to a horizontal magnetic field; rotating the crucible at a rotation speed and in a rotation direction as the cylindrical portion of the monocrystal is being drawn; and separating the semiconductor wafers made of monocrystalline silicon from the cylindrical portion of the monocrystal. The method is characterised in that the value of the rotation speed, averaged over time, is less than 1 rpm and the rotation direction is changed continuously and an amplitude of the rotation speed before and after the change of the rotation direction is not less than 0.5 rpm and not more than 3.0 rpm.
展开▼
