CRYSTAL FILM, SEMICONDUCTOR DEVICE INCLUDING CRYSTAL FILM, AND METHOD FOR MANUFACTURING CRYSTAL FILM

摘要

In the present invention, a crystal film that includes a crystalline metal oxide as a main component thereof and that has a corundum structure, the crystal film having a dislocation density of 1 × 10⁷ cm^-2 or less and a surface area of 10 mm² or greater, is obtained by forming a first transverse crystal growth layer on a substrate by first transverse crystal growth, positioning a mask on the first transverse crystal growth layer, and then forming a second transverse crystal growth layer by second transverse crystal growth.