Method for evaluating SiC ingot, method of manufacturing SiC device, and evaluation method of SiC seed crystal

摘要

Problem to be solved: to estimate the region in which an interstitial defect exists in SiC ingot.Evaluation method of SiC ingotPreparation steps for preparing two or more SiC substrates from SiC ingots grown from the same seed crystal andIn the first and second wafers of the two or more SiC substrates, respectivelyA first defect and a second defect, which are defects associated with the same penetration defect, are detectedA defect position determining process for specifying the position of said first defect and said second defectBased on the result of the defect locating processA guess process for inferring the location of defects associated with the same Penetration Defect in other SiC substrates andAndThe guess process isThe position of the first defect and the second defectThe branch of the first wafer and the second waferAn offset angle of said SiC ingotOn the other hand, the position of the same Penetration Defect in other wafers is estimated.Diagram