Semiconductor film

摘要

Problem to be solved: to provide a semiconductor film having a very small crystal defect.Solution: there is a corundum type crystal structure formed of. Alpha. - Ga2O3 or. Alpha. - Ga2O3 solid solution, and the crystal defect density of at least one surface of the semiconductor film is 1.0 × 106 / cm2 or less.PreferablyOn the crystal defect density of one surface of the semiconductor filmThe ratio of the crystal defect density of the surface (the back) facing the surface of the semiconductor film isBeyond 1.0More preferablyThe X-ray rocking curve of the (104) plane at least one of the semiconductor films has a half width of 500 arcsec or lessMore preferablySemiconductor filmAs the dopant, the group 14 elements are contained in the proportion of 1.0 × 1016 to 1.0 × 1021 / cm3.Diagram