A process for manufacturing silicon carbide coatings

摘要

The present invention relates to a novel process for producing SiC Coatings by depositing silicon carbide (SIC) on a graphite substrate by chemical vapor deposition using dimethyldichlorosilane (DMS) as a silane source.A further aspect of the present invention relates to a novel silicon carbide coating, which can be obtained by a novel process of the present invention, and articles for use in high temperature applications, susceptors and reactors, semiconductor materials, and its use in manufacturing wafers.Figs. 6a and 6B