METHOD FOR FABRICATING AND SEMICONDUCTOR DEVICE HAVING THE SECOND BIT LINE CONTACT HIGHER THAN THE TOP SURFACE OF THE FIRST BIT LINE

摘要

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate having an upper surface; a plurality of first bit line contacts contacting the upper surface of the substrate; a plurality of first bit lines respectively correspondingly positioned on the plurality of first bit line contacts; a plurality of second bit line contacts contacting the upper surface of the substrate; and a plurality of second bit lines respectively correspondingly positioned on the plurality of first bit line contacts. In some embodiments, the top surfaces of the plurality of second bit line contacts are positioned at a vertical level higher than the top surfaces of the plurality of first bit lines.