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Fabrication of perfectly symmetric gate-all-around FET on suspended nanowire using interface interaction
Fabrication of perfectly symmetric gate-all-around FET on suspended nanowire using interface interaction
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机译:使用界面相互作用在悬浮纳米线上制造完美对称的栅极FET
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摘要
A semiconductor device including a plurality of suspended nanowires and a gate structure present on a channel region portion of the plurality of suspended nanowires. The gate structure has a uniform length extending from an upper surface of the gate structure to the base of the gate structure. The semiconductor device further includes a dielectric spacer having a uniform composition in direct contact with the gate structure. Source and drain regions are present on source and drain region portions of the plurality of suspended nanowires.
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