首页> 外国专利> Addressable laser array device including vertical cavity surface emitting lasers adopting nanostructure reflector disposed at intersections of plural wiring patterns

Addressable laser array device including vertical cavity surface emitting lasers adopting nanostructure reflector disposed at intersections of plural wiring patterns

机译:可寻址激光阵列装置,包括采用纳米结构反射器的垂直腔表面发射激光器,其设置在多个布线图案的交叉处

摘要

Provided are an addressable laser array device and an electronic apparatus including the addressable laser array device. The addressable laser array device includes a plurality of VCSELs, each including a distributed Bragg reflector (DBR), a nanostructure reflector including a plurality of nanostructures having a sub-wavelength dimension, and a gain layer disposed between the DBR and the nanostructure reflector; a plurality of first wiring patterns extending in a first direction and being electrically connected to the plurality of VCSELs, respectively; and a plurality of second wiring patterns extending in a second direction intersecting the first direction and being electrically connected to the plurality of VCSELs, respectively, wherein the plurality of VCSELs are disposed at intersections of the plurality of first wiring patterns and the plurality of second wiring patterns, and the addressable VCSEL array device is configured to selectively drive at least some of the plurality of VCSELs.
机译:提供包括可寻址的激光阵列装置和包括可寻址激光阵列装置的电子设备。可寻址激光阵列装置包括多个VCSEL,每个VCSEL包括分布式布拉格反射器(DBR),包括具有子波长尺寸的多个纳米结构的纳米结构反射器,以及设置在DBR和纳米结构反射器之间的增益层;多个沿第一方向延伸并分别电连接到多个VCSEL的多个第一布线图案;并且,多个第二布线图案分别沿与第一方向交叉并电连接到多个VCSEL的第二方向上,其中,多个VCSEL设置在多个第一布线图案和多个第二布线的交叉处图案和可寻址的VCSEL阵列设备被配置为选择性地驱动多个VCSEL中的至少一些。

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