PROBLEM TO BE SOLVED: To provide a technique capable of dry cleaning a substrate processing apparatus using a SiC member. SOLUTION: The cleaning method according to one aspect of the present disclosure includes a step of supplying a halogen-containing gas containing no fluorine to the inside of a processing container that can be exhausted via an exhaust pipe to perform cleaning, and supplying the halogen-containing gas. After the step of performing cleaning, there is a step of supplying a fluorine-containing gas to at least one of the inside of the processing container and the inside of the exhaust pipe to perform cleaning. [Selection diagram] Fig. 4
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