Chemical vapor deposition equipment

摘要

PROBLEM TO BE SOLVED: To provide a chemical vapor deposition apparatus in which a temperature distribution of a wafer at the time of film formation becomes uniform. SOLUTION: A chemical vapor deposition apparatus 30 for growing a SiC single crystal epitaxial film on a wafer W by a chemical vapor deposition method, and a susceptor 1 having a protrusion on the upper surface on which the wafer W is placed. The cover member 21 is provided with an opening for accommodating the wafer W placed on the protrusion, and the inner wall surface of the opening is provided with the cover member 21 installed on the susceptor 1. The chemical vapor deposition apparatus 30 is separated from the protrusion. [Selection diagram] Fig. 1